P70N02LT データシートの表示（PDF） - Niko Semiconductor

部品番号

コンポーネント説明

メーカー

P70N02LT

25V; 70A N-channel logic level enhancement mode field effect transistor

Niko Semiconductor 

NIKO-SEM

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P70N02LT

TO-220

On-State Drain Current1

Drain-Source On-State

Resistance1

Forward Transconductance1

ID(ON)

RDS(ON)

gfs

VDS = 10V, VGS = 10V

VGS = 10V, ID = 30A

VGS = 7V, ID = 24A

VDS = 15V, ID = 30A

DYNAMIC

70

7

8

16

A

9

mΩ

10

S

Input Capacitance

Ciss

2700

Output Capacitance

Coss

VGS = 0V, VDS = 15V, f = 1MHz

500

pF

Reverse Transfer Capacitance

Crss

200

Total Gate Charge2

Qg

25

Gate-Source Charge2

Qgs

VDS = 0.5V(BR)DSS, VGS = 10V,

7

nC

Gate-Drain Charge2

Qgd

ID = 35A

11

Turn-On Delay Time2

td(on)

7

Rise Time2

Turn-Off Delay Time2

tr

VDS = 15V, RL = 1Ω

7

nS

td(off)

ID ≅ 30A, VGS = 10V, RGS = 2.5Ω

24

Fall Time2

tf

6

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

Pulsed Current3

Forward Voltage1

IS

ISM

VSD

IF = IS, VGS = 0V

70

A

170

1.3 V

Reverse Recovery Time

trr

37

nS

Peak Reverse Recovery Current

IRM(REC)

IF = IS, dlF/dt = 100A / µS

200

A

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

0.043

µC

REMARK: THE PRODUCT MARKED WITH “P70N02LT”, DATE CODE or LOT #

2

MAY-25-2001

Share Link: