AM29LV800BB70 データシートの表示（PDF） - Advanced Micro Devices

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AM29LV800BB70

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

Am29LV800B

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

s Single power supply operation

— 2.7 to 3.6 volt read and write operations for

battery-powered applications

s Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29LV800 device

s High performance

— Access times as fast as 70 ns

s Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

s Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

s Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

s Top or bottom boot block configurations

available

s Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

s Minimum 1 million write cycle guarantee

per sector

s 20-year data retention at 125°C

— Reliable operation for the life of the system

s Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

— Known Good Die (KGD)

(see publication number 21536)

s Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

s Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

s Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

s Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

s Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21490 Rev: G Amendment/0

Issue Date: November 10, 1999

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