M5M5255DP-45LL データシートの表示（PDF） - MITSUBISHI ELECTRIC

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M5M5255DP-45LL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

MITSUBISHI ELECTRIC  

'97.4.7

MITSUBISHI LSIs

M5M5255DP,FP -45LL,-55LL,-70LL,

-45XL,-55XL,-70XL

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION

The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized

as 32,768-words by 8-bits which is fabricated using

high-performance 3 polysilicon CMOS technology. The use of

resistive load NMOS cells and CMOS periphery results in a high

density and low power static RAM. Stand-by current is small

enough for battery back-up application. It is ideal for the memory

systems which require simple interface.

FEATURE

Type

M5M5255DP, FP-45LL

M5M5255DP, FP-55LL

M5M5255DP, FP-70LL

M5M5255DP, FP-45XL

M5M5255DP, FP-55XL

M5M5255DP, FP-70XL

Access Power supply current

time Active Stand-by

(max) (max) (max)

45ns

55ns

70ns

45ns

55ns

70ns

55mA

(Vcc=5.5V)

20µA

(Vcc=5.5V)

5µA

(Vcc=5.5V)

0.05µA

(Vcc=3.0V,

Typical)

•Single +5V power supply

•No clocks, no refresh

•Data-Hold on +2.0V power supply

•Directly TTL compatible : all inputs and outputs

•Three-state outputs : OR-tie capability

•Simple memory expantion by /S1, S2

•Common Data I/O

•Battery backup capability

•Low stand-by current··········0.05µA(typ.)

PIN CONFIGURATION (TOP VIEW)

A14 1

A12 2

A7 3

A6 4

A5 5

A4 6

A3 7

A2 8

A1 9

A0 10

DQ1 11

DQ2 12

DQ3 13

GND 14

28 Vcc

27 /W

26 A13

25 A8

24 A9

23 A11

22 S2

21 A10

20 /S1

19 DQ8

18 DQ7

17 DQ6

16 DQ5

15 DQ4

Outline 28P4 (DP)

28P2W-C (DFP)

PACKAGE

M5M255DP

M5M5255DFP

: 28 pin 600 mil DIP

: 28 pin 450 mil SOP

APPLICATION

Small capacity memory units

MITSUBISHI

ELECTRIC

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