TDA8510 データシートの表示（PDF） - Philips Electronics
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TDA8510 Datasheet PDF : 16 Pages
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Philips Semiconductors
26 W BTL and 2 × 13 W SE power
amplifiers
Preliminary specification
TDA8510J
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Single-ended channels
Po
output power
note 1
THD = 0.5%
8
10
−
W
THD = 10%
11
13
−
W
RL1 = 4 Ω; note 1
THD = 0.5%
−
5.5
−
W
THD = 10%
−
7
−
W
THD
fro(l)
fro(h)
Gv
SVRR
total harmonic distortion
low frequency roll-off
high frequency roll-off
closed loop voltage gain
supply voltage ripple rejection
Po = 1 W
at −1 dB; note 2
at −1 dB
note 3
−
0.06 −
%
−
25
−
Hz
20
−
−
kHz
19
20
21
dB
on
48
−
−
dB
mute
standby
46
−
−
dB
80
−
−
dB
Zi
Vn(o)
input impedance
noise output voltage
on; Rs = 0 Ω; note 4
on; Rs = 10 kΩ; note 4
mute; notes 4 and 5
50
60
75
kΩ
−
50
−
µV
−
70
100 µV
−
50
−
µV
αcs
∆Gv
channel separation
channel unbalance
Rs = 10 kΩ
40
60
−
dB
−
−
1
dB
DYNAMIC DISTORTION DETECTOR
THD
total harmonic distortion
V16 ≤ 0.6 V; no short-circuit
−
10
−
%
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and
at a frequency of between 100 Hz and 10 kHz.
4. Noise measured in a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage independent of Rs (Vi = 0 V).
1999 Dec 14
10
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