AN807 データシートの表示（PDF） - Vishay Semiconductors
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AN807 Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
800
Si2318DS
Vishay Siliconix
0.06
0.04
VGS = 4.5 V
VGS = 10 V
600
Ciss
400
0.02
0.00
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 20 V
ID = 3.9 A
8
6
4
2
0
0
2
4
6
8
10
12
Qg - Total Gate Charge (nC)
Gate Charge
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72322
S09-0130-Rev. B, 02-Feb-09
200
Coss
0 Crss
0
8
16
24
32
40
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
VGS = 10 V
ID = 3.9 A
1.7
1.4
1.1
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
0.16
ID = 3.9 A
0.12
0.08
0.04
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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