ILX547K データシートの表示（PDF） - Sony Semiconductor

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ILX547K

2700 × 3 pixel CCD Linear Sensor (Color)

Sony Semiconductor 

ILX547K

Electrooptical Characteristics (Note 1)

(Ta = 25°C, VDD = 5V, fφRS = 1MHz, Input clock = 5Vp-p, Light source = 3200K, IR cut filter CM-500S (t = 1.0mm))

Item

Sensitivity

Sensitivity nonuniformity

Saturation output voltage

Saturation exposure

Dark voltage average

Dark signal nonuniformity

Image lag

Supply current

Total transfer efficiency

Output impedance

Offset level

Red

Green

Blue

Red

Green

Blue

Symbol

RR

RG

RB

PRNU

VSAT

SER

SEG

SEB

VDRK

DSNU

IL

IVDD

TTE

Zo

VOS

Min.

3.6

4.4

3.1

—

1.2

0.16

0.13

0.19

—

—

—

—

92

—

—

Typ.

5.6

6.8

4.8

4

1.5

0.27

0.22

0.31

0.5

3

1

9.5

98

430

3.6

Max.

7.6

9.2

6.5

20

—

—

—

—

3

10

—

15

—

—

—

Unit Remarks

V/(lx · s) Note 2

%

Note 3

V

Note 4

lx · s Note 5

mV Note 6

mV Note 6

%

Note 7

mA

—

%

—

Ω

—

V

Note 8

Notes)

1. In accordance with the given electrooptical characteristics, the black level is defined as the average value

of the signal level of the optical black pixels.

2. For the sensitivity test light is applied with a uniform intensity of illumination.

3. PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.

VOUT (G) = 500mV (Typ.)

PRNU =

(VMAX – VMIN)/2

VAVE

× 100 [%]

Where the 2700 pixels are divided to blocks of 150, R, G and B pixels, respectively. The maximum output

of each block is set to VMAX, the minimum output to VMIN and the average output to VAVE.

4. Use below the minimum value of the saturation output voltage.

5. Saturation exposure is defined as follows.

SE =

VSAT

R

Where R indicates RR, RG, RB, and SE indicates SER, SEG, SEB.

6. Optical signal accumulated time τ int stands at 10ms.

7. VOUT (G) = 500mV (Typ.)

8. Vos is defined as indicated bellow.

VOUT

VOUT indicates VOUT (R), VOUT (G) and VOUT (B).

GND

–3–

VO
S
,

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