AO4433 データシートの表示（PDF） - Alpha and Omega Semiconductor
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AO4433 Datasheet PDF : 4 Pages
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AO4433
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4433 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. The
device is ESD protected. Standard product AO4433
is Pb-free (meets ROHS & Sony 259 specifications).
AO4433L is a Green Product ordering option.
AO4433 and AO4433L are electrically identical.
Features
VDS (V) = -30V
ID = -11 A
(VGS = -20V)
RDS(ON) < 14mΩ (VGS = -20V)
RDS(ON) < 18mΩ (VGS = -10V)
ESD Rating: 1.5KV HBM
SOIC-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±25
-11
-9.7
-50
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
28
54
Maximum Junction-to-Lead C
Steady-State
RθJL
21
Max
40
75
30
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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