AO4427 データシートの表示（PDF） - Unspecified

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AO4427

30V P-Channel MOSFET

Unspecified 

AO4427

30V P-Channel MOSFET

General Description

The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate

charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The

device is ESD protected

Features

VDS (V) = -30V

ID = -12.5 A (VGS = -20V)

RDS(ON)

<

12mΩ

(VGS

=

-20V)

.

RDS(ON) < 14mΩ (VGS = -10V)

ESD Rating: 2KV HBM

SOIC-8

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current AF

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

-30

±25

-12.5

-10.5

-60

3

2.1

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient AF

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

28

54

Maximum Junction-to-Lead C

Steady-State

RθJL

21

Max

40

75

30

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

1/4

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