AO4452 データシートの表示（PDF） - shenzhen wanhexing Electronics Co.,Ltd

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AO4452

100V N-Channel MOSFET SDMOS ™

shenzhen wanhexing Electronics Co.,Ltd 

万和兴电子有限公司 www.whxpcb.com

AO4452

100V N-Channel MOSFET

SDMOS TM

General Description

Product Summary

The AO4452 is fabricated with SDMOSTM trench

technology that combines excellent RDS(ON) with low gate

charge.The result is outstanding efficiency with controlled

switching behavior. This universal technology is well

suited for PWM, load switching and general purpose

applications.

VDS

ID (at VGS=10V)

RDS(ON) (at VGS=10V)

RDS(ON) (at VGS = 7V)

100% UIS Tested

100% Rg Tested

100V

8A

< 25mΩ

< 31mΩ

SOIC-8

D

Top View

Bottom View

D

D

D

D

G

S

S

S

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Maximum

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

±25

Continuous Drain

Current

TA=25°C

TA=70°C

ID

8

6.5

Pulsed Drain Current C

IDM

57

Avalanche Current C

IAR

28

Repetitive avalanche energy L=0.1mH C

EAR

39

TA=25°C

Power Dissipation B TA=70°C

PD

3.1

2

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

31

59

Maximum Junction-to-Lead

Steady-State

RθJL

16

Max

40

75

24

Units

V

V

A

A

mJ

W

°C

Units

°C/W

°C/W

°C/W

Rev 3: May 2012

www.aosmd.com

Page 1 of 6

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