AO4940 データシートの表示（PDF） - Alpha and Omega Semiconductor

部品番号

コンポーネント説明

メーカー

AO4940

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO4940

FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

10V

50

6V

40

4.5V

30

20

VGS=3.5V

10

0

0

1

2

3

4

5

VDS (Volts)

Fig 1: On-Region Characteristics

20

16

VDS=5V

12

8

125°C

4

25°C

0

1.5

2

2.5

3

3.5

4

4.5

VGS(Volts)

Figure 2: Transfer Characteristics

40

35

VGS=4.5V

30

25

20

15

VGS=10V

10

0

5

10

15

20

ID (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

1.6

VGS=10V

1.4

1.2

VGS=4.5V

1

0.8

0.6

-50

-25 0 25 50 75 100 125 150

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

60

1.0E+01

ID=7.5A

50

1.0E+00

1.0E-01

40

125°C

125°C

1.0E-02

THIS PR3O0DUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR U2S5E°SC AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AU1T.H0EO-R03IZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF2S0UCH APPLICATIONS OR USES OF ITS PRODUCTS.

FUNCTIONS AND RELIABILITY WITHOUT25N°OCTICE.

AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

1.0E-04

10

2

4

6

8

10

VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E-05

0.0

0.2

0.4

0.6

0.8

1.0

VSD (Volts)

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

Share Link: