AO4948
30V Dual N-Channel MOSFET
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±16V
10
µA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.2 1.8 2.4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8A
TJ=125°C
15.5 19
mΩ
21
25
VGS=4.5V, ID=4A
18.6 28
mΩ
gFS
Forward Transconductance
VDS=5V, ID=8A
30
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75 1
V
IS
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
600 740 888
pF
77 110 145
pF
50
82 115
pF
0.5 1.1 1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=8A
6
7.5
9
nC
2
2.5
3
nC
Qgd
Gate Drain Charge
2
3
5
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8Ω,
3.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
19
ns
tf
Turn-Off Fall Time
3.5
ns
trr
Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs
6
8
10
ns
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
5/8
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