AOB411L データシートの表示（PDF） - Alpha and Omega Semiconductor

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AOB411L

60V P-Channel MOSFET

Alpha and Omega Semiconductor 

AOB411L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-60

V

IDSS

Zero Gate Voltage Drain Current

VDS=-60V, VGS=0V

TJ=55°C

-1

µA

-5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

±100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=-250µA

-1.5 -2 -2.5 V

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-230

A

RDS(ON) Static Drain-Source On-Resistance

VGS=-10V, ID=-20A

TJ=125°C

13.5 16.5

mΩ

20.5 25

VGS=-4.5V, ID=-20A

17

22 mΩ

gFS

Forward Transconductance

VDS=-5V, ID=-20A

48

S

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current G

-0.7 -1

V

-105 A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

4260 5330 6400 pF

335 483 630 pF

140 234 330 pF

1.4 2.8 4.2

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

65

83 100 nC

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=-10V, VDS=-30V, ID=-20A

35

40

50

nC

15

nC

Qgd

Gate Drain Charge

18

nC

tD(on)

Turn-On DelayTime

17.5

ns

tr

Turn-On Rise Time

VGS=-10V, VDS=-30V, RL=1.5Ω,

20

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

83.5

ns

tf

Turn-Off Fall Time

37

ns

trr

Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs

18

27

36

ns

Qrr

Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs

110 165 215 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on

the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial

TJ =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current limited by package.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: Mar. 2011

www.aosmd.com

Page 2 of 6

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