AON1634 データシートの表示（PDF） - Unspecified

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AON1634

30V N-Channel MOSFET

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AON1634

30V N-Channel MOSFET

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±10V

±10 µA

VGS(th) Gate Threshold Voltage

VDS=VGS, ID=250µA

0.7 1.05 1.5

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

16

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=4A

VGS=4.5V, ID=3A

TJ=125°C

43.5 54

mΩ

68

84

48

62 mΩ

VGS=2.5V, ID=2A

62

82 mΩ

gFS

Forward Transconductance

VDS=5V, ID=4A

15

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.75

1

V

IS

Maximum Body-Diode Continuous Current

2.5

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

245

pF

35

pF

20

pF

5.3

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

5.7

10

nC

Qg(4.5V)

Qgs

Total Gate Charge

Gate Source Charge

VGS=10V, VDS=15V, ID=4A

2.6

5

nC

0.5

nC

Qgd

Gate Drain Charge

1

nC

tD(on)

Turn-On DelayTime

2

ns

tr

Turn-On Rise Time

VGS=10V, VDS=15V, RL=3.75Ω,

3.5

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

22

ns

tf

Turn-Off Fall Time

3.5

ns

trr

Body Diode Reverse Recovery Time IF=4A, dI/dt=500A/µs

6.5

ns

Qrr

Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs

7.5

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial

TJ =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

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