EGP10A データシートの表示（PDF） - Fairchild Semiconductor
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EGP10A Datasheet PDF : 3 Pages
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Discrete POWER & Signal
Technologies
EGP10A - EGP10K
Features
• Superfast recovery time for high
efficiency.
• Low forward voltage, high current
capability.
• Low leakage current.
• High surge current capability.
DO-41
COLOR BAND DENOTES CATHODE
1.0 min (25.4)
Dimensions in
inches (mm)
0.205 (5.21)
0.160 (4.06)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
IO
if(surge)
PD
RθJA
Tstg
TJ
Parameter
Average Rectified Current
.375 " lead length @ TL = 55°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Storage Temperature Range
Operating Junction Temperature
Value
1.0
30
2.5
17
50
-65 to +150
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
A
A
W
mW /°C
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum Forward Voltage @ 1.0 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
Device
10A 10B 10C 10D 10F 10G 10J 10K
50
100 150 200 300 400 600 800
35
70
105 140 210 280 420 560
50
100 150 200 300 400 600 800
5.0
100
50
75
0.95
1.25
1.7
22
15
Units
V
V
V
µA
µA
nS
V
pF
©1999 Fairchild Semiconductor Corporation
EPG10A - EPG10K, Rev. A
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