AP2125N-2.5TRG1 データシートの表示（PDF） - BCD Semiconductor

部品番号

コンポーネント説明

メーカー

AP2125N-2.5TRG1

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

AP2125

Electrical Characteristics (Continued)

AP2125-4.15 Electrical Characteristics

(VIN=5.15V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)

Parameter

Output Voltage

Input Voltage

Maximum Output Current

Load Regulation

Line Regulation

Dropout Voltage

Quiescent Current

Symbol

VOUT

VIN

IOUT(MAX)

VRLOAD

VRLINE

VDROP

IQ

Conditions

VIN=5.15V

1mA≤IOUT≤30mA

VIN-VOUT=1V, VOUT=4.06V

VIN=5.15V

1mA≤IOUT≤300mA

5.15V≤VIN≤6V

IOUT=30mA

IOUT=10mA

IOUT=100mA

IOUT=300mA

VIN=5.15V, IOUT=0mA

Min

4.067

300

Typ Max Unit

4.15 4.233 V

6

V

360

mA

13

mV

1

mV

6.5

10

65

100

mV

200 300

60

90

µA

Standby Current

Power Supply

Rejection Ratio

ISTD

PSRR

VIN=5.15V

VCE in OFF mode

Ripple 0.5Vp-p f=100Hz

VIN=5.15V

f=1KHz

Output Voltage

Temperature Coefficient

(∆VOUT/VOUT)/∆T IOUT=30mA

Short Current Limit

RMS Output Noise

CE "High" Voltage

ISHORT

VNOISE

VOUT=0V

10Hz ≤f≤100kHz

CE input voltage "High"

CE "Low" Voltage

CE input voltage "Low"

Thermal Shutdown

Thermal Shutdown Hyster-

esis

0.01

1.0

µA

65

dB

65

dB

±100

ppm/oC

50

mA

50

µVrms

1.5

V

0.4

V

160

oC

25

oC

May. 2010 Rev. 1. 4

BCD Semiconductor Manufacturing Limited

11

Share Link: