AP2128K-3.3TRG1(2008) データシートの表示（PDF） - BCD Semiconductor

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AP2128K-3.3TRG1
(Rev.:2008)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

AP2128

Electrical Characteristics (Continued)

(AP2128-1.0V/1.2V,VIN min. =2.5V, AP2128-3.3V,

CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)

Parameter

Symbol

Conditions

Min

Output Voltage

VOUT

VIN=VOUT+1V

1mA≤IOUT≤300mA

98%*

VOUT

Input Voltage

VIN

2.5

Maximum Output Current

IOUT(MAX)

Load Regulation

Line Regulation

Dropout Voltage

Quiescent Current

Standby Current

Power Supply

Rejection Ratio

∆VOUT

/(∆IOUT*VOUT)

∆VOUT

/(∆VIN*VOUT)

VDROP

IQ

ISTD

PSRR

VIN-VOUT=1V,

1mA≤IOUT≤300mA

VOUT+0.5V≤VIN≤6V

IOUT=30mA

VOUT=1.0V, IOUT=300mA

VOUT=1.2V, IOUT=300mA

VOUT=3.3V, IOUT=300mA

VIN=VOUT+1V, IOUT=0mA

VIN=VOUT+1V,

VSHUTDOWN in off mode

Ripple 1Vp-p

VIN=VOUT+1V

f=100Hz

f=1KHz

f=10KHz

Output Voltage

Temperature Coefficient

(∆VOUT/VOUT)

/∆T

IOUT=30mA, -40oC≤TJ≤85oC

Output Current Limit

Short Current Limit

Soft Start Time

RMS Output Noise

ILIMIT

ISHORT

tUP

VNOISE

VIN-VOUT=1V,

VOUT=0.98*VOUT

VOUT=0V

TA=25oC, 10Hz ≤f≤100kHz

Shutdown "High" Voltage

Shutdown input voltage "High" 1.5

Typ

450

1400

1200

170

60

0.1

65

65

45

±100

400

50

50

60

Max Unit

102%*

VOUT

V

6

V

mA

0.6 %/A

0.06 %/V

1500

1300 mV

300

90

µA

1.0 µA

dB

dB

dB

ppm/oC

mA

mA

µs

µVrms

6

V

Shutdown "Low" Voltage

VOUT Discharge MOSFET

RDS(ON)

Shutdown Pull Down Resis-

tance

Thermal Shutdown

Thermal Shutdown Hysteresis

Shutdown input voltage "Low" 0

Shutdown input voltage "Low"

0.4

V

60

Ω

3

MΩ

165

oC

30

oC

Jun. 2008 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

7

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