AP2129K-ADJTRG1(2008) データシートの表示（PDF） - BCD Semiconductor

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AP2129K-ADJTRG1
(Rev.:2008)

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

AP2129

Electrical Characteristics

AP2129-1.0, 1.2 and 3.3 Electrical Characteristics

(CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.

Parameter

Symbol

Conditions

Min

Output Voltage

VOUT

VIN=VOUT+1V, (Note 2)

1mA≤IOUT≤300mA

98%*

VOUT

Input Voltage

Maximum Output Current

Load Regulation

Line Regulation

VIN

1.8

IOUT(MAX)

∆VOUT

VIN-VOUT=1V, (Note 2)

/(∆IOUT*VOUT) 1mA≤IOUT≤300mA

∆VOUT

VOUT+0.5V≤VIN≤6V, (Note 2)

/(∆VIN*VOUT) IOUT=30mA

Dropout Voltage

Quiescent Current

Standby Current

VDROP

IQ

ISTD

VOUT=1.0V, IOUT=300mA

VOUT=1.2V, IOUT=300mA

VOUT=3.3V, IOUT=300mA

VIN=VOUT+1V, IOUT=0mA

VIN=VOUT+1V,

VSHUTDOWN in off mode

Power Supply

Rejection Ratio

PSRR

Ripple 1Vp-p

VIN=VOUT+1V

f=100Hz

f=1KHz

f=10KHz

Output Voltage

Temperature Coefficient

(∆VOUT/VOUT)

/∆T

IOUT=30mA, -40oC≤TJ≤85oC

Output Current Limit

Short Current Limit

Soft Start Time

RMS Output Noise

Shutdown "High" Voltage

ILIMIT

ISHORT

tUP

VNOISE

VIN-VOUT=1V,

VOUT=0.98*VOUT

VOUT=0V

TA=25oC, 10Hz ≤f≤100kHz

Shutdown input voltage "High" 1.5

Shutdown "Low" Voltage

Shutdown input voltage "Low"

0

VOUT Discharge MOSFET

RDS(ON)

Shutdown input voltage "Low"

Shutdown Pull Down Resis-

tance

Thermal Shutdown

Thermal Shutdown Hysteresis

Typ

450

1400

1200

170

60

0.1

65

65

45

±100

400

50

50

60

60

3

165

30

Max Unit

102%*

VOUT

V

6

V

mA

0.6 %/A

0.06 %/V

1500

1300 mV

300

90

µA

1.0 µA

dB

dB

dB

ppm/oC

mA

mA

µs

µVrms

6

V

0.4

V

Ω

MΩ

oC

oC

Note 2: VIN=1.8V for 1.0 and 1.2 version

Jul. 2008 Rev. 1.0

BCD Semiconductor Manufacturing Limited

6

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