2132B-1.2G1 データシートの表示（PDF） - BCD Semiconductor
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2132B-1.2G1 Datasheet PDF : 13 Pages
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Preliminary Datasheet
2A CMOS LDO REGULATOR
AP2132B
Electrical Characteristics
VIN = VOUT +0.5V, VCTRL= VEN =5V, TA=25oC, CIN=COUT=10µF, CCTRL=1µF, IOUT=10mA, Bold typeface
applies -40 oC≤TA≤85 oC unless otherwise specified.
Parameter
Output Voltage
Input Voltage
Symbol
VOUT
VIN
Conditions
VIN = VOUT+0.5V,
IOUT =10mA
Min
VOUT ×
98%
1.4
Typ
Max
VOUT ×
102%
5.5
Unit
V
V
Current Limit
ILimit
VIN – VOUT = 1V
3
A
Load Regulation
Line Regulation
Dropout Voltage
Supply Current
VCTRL Current
Power Supply
Rejection Ratio
Output Voltage
Temperature
Coefficient
Reference Voltage
Enable
Voltage
Enable
Voltage
“High”
“Low”
Thermal Shutdown
Thermal Shutdown
Hysteresis
VOUT Power
Good Voltage
VPG Hysteresis
Adjust
Pin
Threshold
Thermal Resistance
(Junction to Case)
VRLOAD
VRLINE
VDROP
ISUPPLY
ICTRLH
ICTRLL
PSRR
△VOUT
VOUT×△T
VREF
OTSD
VTHPG
θJC
VIN=VOUT +0.5V, 10mA≤IOUT≤2A
VOUT + 0.5V≤VIN≤5V ,
IOUT = 10mA
IOUT =500mA
IOUT =1A
IOUT =2A
VIN=VOUT+0.5V, IOUT=0mA
VIN = VOUT+0.5V, VCTRL=VEN=5V
VIN=VOUT+0.5V, Vctrl= 5V, VEN=0V
Ripple 0.5Vp-p,
VIN=VOUT+1V
f=100Hz
f=1kHz
IOUT=10mA, -40 oC≤TA≤85oC
Adjust Short to VOUT
Enable Input Voltage “High”
Enable Input Voltage “Low”
PSOP-8
0.784
1.2
10
2
80
150
300
300
250
0.1
60
60
±100
0.8
165
20
92
7
200
40
mV
mV
120
mV
200
mV
450
mV
µA
500
µA
1.0
µA
dB
dB
ppm/ oC
0.816
0.4
V
V
V
oC
oC
%
%
mV
ºC/W
Oct. 2010 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
6
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