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2213M-3.3E1(2007) データシートの表示(PDF) - BCD Semiconductor

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2213M-3.3E1
(Rev.:2007)
BCDSEMI
BCD Semiconductor BCDSEMI
2213M-3.3E1 Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Data Sheet
500mA LOW NOISE LDO REGULATOR
Absolute Maximum Ratings (Note 1)
AP2213
Parameter
Symbol
Value
Unit
Supply Input Voltage
Enable Input Voltage
Power Dissipation
Lead Temperature (Soldering, 10sec)
VIN
VEN
PD
TLEAD
20
V
20
V
Internally Limited (Thermal Protection)
W
260
oC
Junction Temperature
TJ
150
oC
Storage Temperature
TSTG
-65 to 150
oC
ESD (Machine Model)
ESD
300
V
Thermal Resistance (No Heatsink)
θJA
TO-252-2 (1)
SOIC-8
90
oC/W
160
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Input Voltage
Enable Input Voltage
Operating Junction Temperature
Symbol
VIN
VEN
TJ
Min
Max
Unit
2.5
18
V
0
18
V
-40
125
oC
Mar. 2007 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
5

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