AP2162A データシートの表示（PDF） - Diodes Incorporated.
部品番号
コンポーネント説明
メーカー
AP2162A Datasheet PDF : 16 Pages
| |||
AP2162A/ AP2172A
Electrical Characteristics (@TA = +25°C, VIN = +5.0V, unless otherwise specified.)
Symbol
Parameter
Test Conditions (Note 5)
Min Typ Max Unit
VUVLO Input UVLO
1.6 2.0 2.4 V
ISHDN Input Shutdown Current
Disabled, IOUT = 0
0.1
1
µA
IQ
Input Quiescent Current, Dual
Enabled, IOUT = 0
115 180 µA
ILEAK Input Leakage Current
Disabled, OUT grounded
1
µA
IREV Reverse Leakage Current
Disabled, VIN = 0V, VOUT = 5V, IREV at VIN
0.01 0.1 µA
VIN = 5V, IOUT = 1A,
TA = +25°C
SO-8
MSOP-8EP,
U-DFN3030-8
90 110
85 105
RDS(ON) Switch On-Resistance
VIN = 5V, IOUT = 1A, -40°C ≤ TA ≤ +85°C
135 mΩ
VIN = 3.3V, IOUT = 1A,
TA = +25°C
SO-8
MSOP-8EP,
U-DFN3030-8
110 130
105 125
ILIMIT Over-Load Current Limit
VIN = 3.3V, IOUT = 1A, -40°C ≤ TA ≤ +85°C
VIN = 5V, VOUT = 4V, CL = 10µF -40°C ≤ TA ≤ +85°C
170
1.1 1.4 1.7 A
ILIMIT_G Ganged Over-Load Current Limit
VIN = 5V, VOUT = 4.8V, OUT1 &
OUT2 tied together, CL = 10µF
-40°C ≤ TA ≤ +85°C
2.2 2.8 3.4 A
ITrig Current Limiting Trigger Threshold
Output Current Slew rate (<100A/s), CL = 10µF
1.8
A
ITrig_G
Ganged Current Limiting Trigger
Threshold
OUT1 & OUT2 tied together, Output Current Slew rate
(<100A/s), CL = 10µF
3.6
A
IOS Short-Circuit Current per Channel
OUTx connected to ground, device enabled into short
circuit, CL = 10µF
1.4
A
IOS_G Ganged Short-Circuit Current
OUT1 & OUT2 connected to ground, device enabled into
short-circuit, CL = 10µF
2.2
2.8 3.4
A
TSHORT Short-Circuit Response Time
VOUT = 0V to IOUT = ILIMIT (output shorted to ground)
2
µs
VIL EN Input Logic Low Voltage
VIN = 2.7V to 5.5V
0.8 V
VIH EN Input Logic High Voltage
VIN = 2.7V to 5.5V
2
V
ISINK EN Input Leakage
VEN = 0V to 5.5V
1
µA
ILEAK-O
TR
TF
TD(ON)
TD(OFF)
RFLG
Output Leakage Current
Output Turn-On Rise Time
Output Turn-Off Fall Time
Output Turn-On Delay Time
Output Turn-Off Delay Time
FLG Output FET On-Resistance
Disabled, VOUT = 0V
CL = 1µF, RLOAD = 5Ω
CL = 1µF, RLOAD = 5Ω
CL = 100µF, RLOAD = 5Ω
CL = 100µF, RLOAD = 5Ω
IFLG = 10mA
0.5
1
µA
0.6 1.5 ms
0.05 0.3 ms
0.2 0.5 ms
0.1 0.3 ms
20
40
Ω
IFOH FLG Off Current
VFLG = 5V
0.01 1
µA
TBlank
RDIS
TSHDN
FLG Blanking Time
Discharge Resistance (Note 6)
Thermal Shutdown Threshold
CL = 10µF
VIN = 5V, disabled, IOUT =1mA
Enabled, RLOAD =1kΩ
4
7
15 ms
100
Ω
140
C
THYS Thermal Shutdown Hysteresis
25
C
SO-8 (Note 7)
115
θJA Thermal Resistance Junction-to-Ambient MSOP-8EP (Note 8)
U-DFN3030-8 (Note 8)
75
°C/W
60
Notes:
5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
6. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up / power-down when VIN < VUVLO). The
discharge function offers a resistive discharge path for the external storage capacitor for limited time.
7. Test condition for SO-8: Device mounted on FR-4 substrate PCB with minimum recommended pad layout.
8. Test condition for MSOP-8EP and U-DFN3030-8: Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top
layer and thermal vias to bottom layer ground plane.
AP2162A/ AP2172A
Document number: DS32192 Rev. 4 - 2
4 of 16
www.diodes.com
April 2013
© Diodes Incorporated
Share Link: 