2302GN データシートの表示（PDF） - Advanced Power Electronics Corp

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2302GN

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

10

T A =25 o C

8

6

4.5V

3.5V

3.0V

2.5V

4

V G =2.0V

2

0

0.0

0.5

1.0

1.5

2.0

2.5

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

I D = 3.1 A

T A =25 o C

90

80

70

60

2

3

4

5

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

10.0

1.0

T j =150 o C

T j =25 o C

0.1

0.1

0.5

0.9

1.3

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

AP2302GN

7

6

T A =150 o C

5

4

3

2

4.5V

3.5V

3.0V

2.5V

V G =2.0V

1

0

0.0

0.5

1.0

1.5

2.0

2.5

V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.8

I D =3.6A

1.6 V G =4.5V

1.4

1.2

1.0

0.8

0.6

-50

0

50

100

150

T j , Junction Temperature ( o C)

Fig 4. Normalized On-Resistance

1.4

1.0

0.6

0.2

-50

0

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

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