AP2302N データシートの表示（PDF） - Advanced Power Electronics Corp
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AP2302N Datasheet PDF : 4 Pages
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AP2302N
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
▼ Small package outline
D
▼ Surface mount package
Description
S
SOT-23 G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
85mΩ
3.2A
D
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
G
S
Rating
20
±12
3.2
2.6
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice
200503044
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