AP4300AP-BE1 データシートの表示（PDF） - BCD Semiconductor
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AP4300AP-BE1 Datasheet PDF : 12 Pages
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Data Sheet
DUAL OP AMP AND VOLTAGE REFERENCE
Electrical Characteristics
Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified.
Parameter
Conditions
Total Supply Current, Excluding
Current in Voltage Reference
VCC=5V, no load, -40oC ≤TA ≤105oC
VCC=18V, no load, -40oC ≤TA ≤105oC
Voltage Reference Section
Reference Voltage for AP4300-A
IK=10mA, 0.5% tolerance
TA=25oC 1% tolerance
Reference Voltage for AP4300-B
IK=10mA, 0.5% tolerance
TA=25oC 1% tolerance
Reference Voltage Deviation over Full IK=10mA, TA=-40 to 105oC
Temperature Range
Min
2.587
2.574
2.487
2.475
Minimum Cathode Current for Regula-
tion
Dynamic Impedance
IK=1.0 to 80mA, f<1kHz
Op Amp 1 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted)
Input Offset Voltage
TA=25oC
TA=-40 to 105oC
Input Offset Voltage
Temperature Drift
TA=-40 to 105oC
Input Bias Current (Inverting Input TA=25oC
Only)
Large Signal Voltage Gain
VCC=15V, RL=2KΩ, VO=1.4 to 11.4V 85
Power Supply Rejection Ratio
VCC=5 to 18V
70
Source VCC=15V, VID=1V, VO=2V
20
Output Current
Sink
VCC=15V, VID=-1V, VO=2V
10
Output Voltage Swing (High)
VCC=18V, RL=10KΩ, VID=1V
16
Output Voltage Swing (Low)
VCC=18V, RL=10KΩ, VID=-1V
Slew Rate
VCC=18V, RL=2kΩ, AV=1,
0.2
VIN=0.5 to 2V, CL=100pF
Gain Bandwidth Product
VCC=18V, RL=2kΩ, CL=100pF,
0.7
VIN=10mV, f=100kHz
AP4300
Typ Max Unit
0.5
0.8
mA
0.6
1.2
2.613
2.600
V
2.626
2.513
2.500
V
2.525
5
24
mV
0.1
1
mA
0.2
0.5
Ω
0.5
3
mV
5
7
µV/oC
20
150
nA
100
dB
90
dB
40
mA
20
mA
16.5
V
17
100
mV
0.5
V/µ s
1
MHz
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
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