AP50L02S データシートの表示（PDF） - Advanced Power Electronics Corp
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AP50L02S Datasheet PDF : 6 Pages
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AP50L02S/P
16
I D =20A
14
V DS =12V
12
V DS =16V
V DS =20V
10
8
6
4
2
0
0
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
100
Crss
10
1
6
11
16
21
26
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
3
10
2
T j =150 o C
T j =25 o C
1
1
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50
100
150
T j , Junction Temperature( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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