AP80N30W データシートの表示（PDF） - Advanced Power Electronics Corp
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AP80N30W Datasheet PDF : 5 Pages
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Advanced Power
Electronics Corp.
AP80N30W
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ High Speed Switching
G
S
Description
AP80N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
BVDSS
RDS(ON)
ID
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
D
S
300V
66mΩ
88A
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
IDM
IDR
IDR(PULSE)
PD@TC=25℃
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Pulsed Drain Current1
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current1
Total Power Dissipation
Avalanche Current3
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature
Rating
300
±30
88
270
88
270
150
30
45
-55 to 150
150
Units
V
V
A
A
A
A
W
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.833
40
Units
℃/W
℃/W
1
200805132
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