APL3208A データシートの表示（PDF） - Anpec Electronics
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APL3208A Datasheet PDF : 17 Pages
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APL3208A/B/C
Recommended Operating Conditions (Note 3)
Symbol
VACIN ACIN Input Voltage
TA
Ambient Temperature
TJ
Junction Temperature
Note 3: Refer to the typical application circuit
Parameter
Range
4.5 ~ 5.5
-40 ~ 85
-40 ~ 125
Unit
V
oC
oC
Electrical Characteristics
Unless otherwise specified, these specifications apply over VACIN=5V, VBAT=3.8V and TA= -40 ~ 85 oC. Typical values are at TA=25oC.
Symbol
Parameter
ACIN INPUT CURRENT AND POWER-ON-RESET (POR)
Test Conditions
APL3208A/B/C
Unit
Min. Typ. Max.
IACIN
ACIN Supply Current
IOUT=0A, ICHG_DET=0A
-
250 350 µA
VACIN ACIN POR Threshold
VACIN rising
2.4
-
2.8
V
ACIN POR Hysteresis
200 250 300 mV
TB(ACIN) ACIN Power-On Blanking Time
INTERNAL SWITCH ON RESISTANCE
-
8
-
ms
CHG_DET Discharge On
Resistance
-
500
-
Ω
INPUT OVER-VOLTAGE PROTECTION (OVP)
VOVP Input OVP Threshold
VACIN rising
6
6.17 6.35 V
Input OVP Hysteresis
200 300 400 mV
Input OVP Propagation Delay
-
-
1
µs
TON(OVP) Input OVP Recovery Time
CURRENT-LIMIT PROTECTION
-
8
-
ms
ILIM
Current Limit Threshold
BATTERY OVER-VOLTAGE PROTECTION
APL3208A, TA=25°C
APL3208B, TA=25°C
APL3208C, TA=25°C
400 450 500
500 550 600 mA
600 650 700
VBOVP
Battery OVP Threshold
Battery OVP Hysteresis
VBAT rising
4.32 4.35 4.38 V
220 270 320 mV
IVBAT VBAT Pin Leakage Current
VBAT = 4.4V
-
-
20 nA
TB(BOVP) Battery OVP Blanking Time
-
176
-
µs
INTERNAL P-MOSFET (CHG_DET, OUT AND CHG_SW PINS)
VCHG_DET-VBAT Lockout Threshold
VCHG_DET from low to high, P-MOSFET is
controlled by CHG_SW
-
120
-
mV
VCHG_DET from high to low, P-MOSFET is off
-
20
-
OUT Input Current
CHG_SW Leakage Current
VCHG_DET=0V, VOUT=4.2V, CHG_SW =GND
-
-
1
µA
VACIN=VCHG_DET= VOUT=5V, VCHG_SW=0V
-
7.5
13
µA
OUT Leakage Current
VACIN=VCHG_DET= VCHG_SW =5V, VOUT=0V
-
-
1
µA
Copyright © ANPEC Electronics Corp.
3
Rev. A.2 - Nov., 2009
www.anpec.com.tw
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