APM2301AA データシートの表示（PDF） - Anpec Electronics

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APM2301AA

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM2301AA

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM*

IS*

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

300µs Pulsed Drain Current

Diode Continuous Forward Current

VGS=-4.5V

TJ

TSTG

Maximum Junction Temperature

Storage Temperature Range

PD* Maximum Power Dissipation

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

TA=25°C

TA=100°C

Rating

-20

±12

-3

-10

-1

150

-55 to 150

0.83

0.3

150

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

IDSS Zero Gate Voltage Drain Current

VGS(th) Gate Threshold Voltage

IGSS Gate Leakage Current

RDS(ON) a Drain-Source On-state Resistance

VSDa Diode Forward Voltage

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VGS=0V, IDS=-250µA

VDS=-16V, VGS=0V

TJ=85°C

VDS=VGS, IDS=-250µA

VGS=±12V, VDS=0V

VGS=-4.5V, IDS=-3A

VGS=-2.5V, IDS=-2A

ISD=-1.25A, VGS=0V

VDS=-10V, VGS=-4.5V,

IDS=-3A

APM2301AA

Unit

Min. Typ. Max.

-20

V

-1

µA

-30

-0.5 -0.6 -1

V

±100 nA

72 90

mΩ

98 115

-0.7 -1.3 V

9

12

3

nC

1.2

Copyright  ANPEC Electronics Corp.

2

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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