APM2301AA
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.0
V = -4.5V
GS
1.8 I = -3A
DS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0
R @T =25oC: 72mΩ
ON
j
25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
10
T =150oC
j
T =25oC
j
1
0.3
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD - Source - Drain Voltage (V)
Capacitance
800
Frequency=1MHz
640
Ciss
480
320
160
Crss
Coss
0
0
4
8
12
16
20
-VDS - Drain - Source Voltage (V)
Gate Charge
5
V = -10V
DS
I = -3A
DS
4
3
2
1
0
0
2
4
6
8
10
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
6
Rev. B.1 - Mar., 2005
www.anpec.com.tw