APM2055NU データシートの表示（PDF） - Anpec Electronics
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APM2055NU Datasheet PDF : 10 Pages
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APM2055NU
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM2055NU
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
20
IDSS Zero Gate Voltage Drain Current VDS=16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
0.6
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
VGS=10V, IDS=12A
RDS(ON) a Drain-Source On-state Resistance VGS=4.5V, IDS=6A
VGS=2.5V, IDS=2A
Diode Characteristics
VSDa Diode Forward Voltage
ISD=2A, VGS=0V
Dynamic Characteristics b
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=12A
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
V
1
µA
30
0.9 1.5 V
±100 nA
55 70
75 90 mΩ
140 160
0.7 1.3 V
2.5
Ω
380
120
pF
75
5
8
13 23
ns
16 24
3
5
5.4 7
1.4
nC
1.7
Copyright © ANPEC Electronics Corp.
3
Rev. B.3 - Oct., 2005
www.anpec.com.tw
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