APM2506NUB データシートの表示（PDF） - Anpec Electronics
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APM2506NUB Datasheet PDF : 10 Pages
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APM2506NUB
Electrical
Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
APM2506NUB
Unit
Min. Typ. Max.
Drain-Source Avalanche Ratings
EAS Drain-Source Avalanche Energy
ID=20A, L=0.5mH
100 mJ
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VGS=0V, IDS=250µA
VDS=20V, VGS=0V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
VGS=4.5V, IDS=20A
25
V
1
µA
1.3 1.8 2.5 V
±100 nA
4.8 6
mΩ
7
9
Diode Characteristics
VSDa Diode Forward Voltage
trrb Reverse Recovery Time
Qrrb Reverse Recovery Charge
ISD=20A, VGS=0V
ISD=10A, dISD/dt =100A/µs
Dynamic Characteristics b
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=40A
Notes:
a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.
0.7 1.1 V
30
ns
14
nC
1.0 2.1 Ω
3100
680
pF
520
19
20
ns
62
43
37.5 56
9.4
nC
21
Copyright © ANPEC Electronics Corp.
3
Rev. B.2 - Jun., 2006
www.anpec.com.tw
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