APM2095PD データシートの表示（PDF） - Anpec Electronics

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APM2095PD

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM2095PD

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Dynamic Characteristics b

RG Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VGS=0V,

VDS=-15V,

Frequency=1.0MHz

td(ON) Turn-on Delay Time

Tr Turn-on Rise Time

td(OFF) Turn-off Delay Time

VDD=-10V, RL=10Ω,

IDS=-1A, VGEN=-4.5V,

RG=6Ω

Tf Turn-off Fall Time

Notes:

a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

APM2095PD

Min. Typ. Max.

12.5

1160

250

85

12 21

25 42

52 85

18 32

Unit

Ω

pF

ns

Copyright  ANPEC Electronics Corp.

3

Rev. B.1 - Apr., 2005

www.anpec.com.tw

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