APM9932CK データシートの表示（PDF） - Anpec Electronics

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APM9932CK

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM9932CK

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Dynamic Characteristics b

Ciss Input Capacitance

Coss Output Capacitance

Crss

Reverse Transfer

Capacitance

td(ON) Turn-on Delay Time

Tr Turn-on Rise Time

N-Channel

VGS=0V,

VDS=20V,

Frequency=1.0MHz

P-Channel

VGS=0V,

VDS=-20V,

Frequency=1.0MHz

N-Channel

VDD=10V, RL=10Ω,

IDS=1A, VGEN=4.5V,

RG=6Ω

td(OFF) Turn-off Delay Time

Tf Turn-off Fall Time

P-Channel

VDD=-10V, RL=10Ω,

IDS=-1A, VGEN=-4.5V,

RG=6Ω

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

N-Channel

VDS=10V, VGS=4.5V,

IDS=6A

P-Channel

VDS=-10V, VGS=-4.5V,

IDS=-5A

Notes:

a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%.

b : Guaranteed by design, not subject to production testing.

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

APM9932CK

Unit

Min. Typ. Max.

1205

1210

310

pF

310

210

205

8

15

7

13

10 17

9

16

ns

29 43

27 42

7

11

6

9

14 22

17 25

5

nC

5.2

2.8

3.6

Copyright  ANPEC Electronics Corp.

3

Rev. B.2 - Apr., 2005

www.anpec.com.tw

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