APM4430KC-TU(2001) データシートの表示（PDF） - Anpec Electronics
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APM4430KC-TU Datasheet PDF : 10 Pages
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APM4430
N-Channel Enhancement Mode MOSFET
Features
•
30V/23A
,
RDS(ON)=4.5mΩ(typ.)
@
V =10V
GS
RDS(ON)=7mΩ(typ.)
@
V =5V
GS
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SO-8 Package
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems .
Ordering and Marking Information
Pin Description
5
4
6
3
7
2
8
1
SO − 8
APM 4430
APM4430 K :
H a n d lin g C o d e
Temp. Range
Package Code
APM 4430
XXXXX
Package Code
K : SO -8
O perating Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID
Maximum Drain Current – Continuous
IDM
Maximum Drain Current – Pulsed
Rating
Unit
30
V
±20
23
A
± 60
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
1
Rev. A.1 - Oct., 2001
www.anpec.com.tw
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