ARF450 データシートの表示（PDF） - Advanced Power Technology

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ARF450

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

Advanced Power Technology  

Common Source

Push-Pull Pair

ARF450

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

ARF450

BeO

11405

150V 500W 120MHz

The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull

or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

• Specified 150 Volt, 81.36 MHz Characteristics: • High Performance Push-Pull RF Package.

•

Output Power = 500 Watts.

• Very High Breakdown for Improved Ruggedness.

•

Gain = 13dB (Class C)

• Low Thermal Resistance.

•

Efficiency = 75%

• Nitride Passivated Die for Improved Reliability.

MAXIMUM RATINGS

Symbol

VDSS

VDGO

ID

VGS

PD

TJ,TSTG

TL

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ TC = 25°C

Gate-Source Voltage

Total Device Dissipation @ TC = 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

All Ratings: TC = 25°C unless otherwise specified.

ARF450

UNIT

450

Volts

450

11

Amps

±30

Volts

650

Watts

-55 to 200

°C

300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)

500

VDS(ON) On State Drain Voltage 1 (ID(ON) = 5.5A, VGS = 10V)

IDSS

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)

IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

gfs

Forward Transconductance (VDS = 25V, ID = 5.5A)

3

gfs1/ gfs2 Forward Transconductance Ratio (VDS = 25V, ID = 5.5A)

0.9

VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA)

3

∆VGS(TH) Delta Gate Threshold Voltage (VDS = VGS, ID = 50mA)

TYP MAX UNIT

Volts

5

25

µA

250

±100 nA

5.8

mhos

1.1

5

0.1

Volts

THERMAL CHARACTERISTICS

Symbol Characteristic (per package unless otherwise noted)

MIN

RθJC

RθCS

Junction to Case (per section)

Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)

TYP MAX UNIT

0.54

°C/W

0.1

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA:

405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382 - 8028 FAX: (541) 388 -0364

EUROPE: Chemin de Magret

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

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