AS29F040 データシートの表示（PDF） - Alliance Semiconductor

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AS29F040

5V 512K x 8 CMOS FLASH EEPROM

Alliance Semiconductor 

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Read byte (DQ0–DQ7)

Address = VA *

NO

Is time

elapsed = 1ms?

YES

DQ7 =

data?

YES DONE

NO

NO

DQ5 = 1?

YES

Read byte (DQ0–DQ7)

Address = VA *

Read byte (DQ0–DQ7)

two times with OE toggling

Address = don’t care

Does

DQ6

toggle?

NO DONE

YES

NO

DQ5 = 1?

YES

Read byte (DQ0–DQ7)

two times with OE toggling

Address = don’t care

DQ7 =

data†?

YES DONE

NO

Issue Reset/read

command

Addr = X

DONE

Data = F0h

Does

toDgQgl6e*?

NO

DONE

YES

* VA = Byte address for programming. VA = any of the sector addresses

within the sector being erased during sector erase. VA = valid address

equals any non-protected sector group address during chip erase.

† DQ7 rechecked even if DQ5 = 1 because DQ5 and DQ7 may not change

simultaneously.

Issue Reset/read

command

Addr = X

Data = F0h

DONE

* DQ6 rechecked even if DQ5 = 1 because DQ6 may stop toggling when

DQ5 changes to 1.

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