5962-9669201HTA データシートの表示（PDF） - Austin Semiconductor

部品番号

コンポーネント説明

メーカー

5962-9669201HTA

512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY

Austin Semiconductor 

Austin Semiconductor, Inc.

FLASH

AS29F040

If DQ5 goes high during a program or erase operation,

writing the reset command returns the device to reading array

data (also applies during Erase Suspend).

Autoselect Command Sequence

The autoselect command sequence allows the host

system to access the manufacturer and devices codes, and

determine whether or not a sector is protected. The Command

Definitions table shows the address and data requirements.

This method is an alternative to that shown in the Autoselect

Codes (High Voltage Method) table, which is intended for

PROM programmers and requires VID on address bit A9.

The auto select command sequence is initiated by writing

two unlock cycles, followed by the autoselect command. The

device then enters the autoselect mode, and the system may

read at any address any number of times, without initiating

another command sequence.

A read cycle at address XX00h retrieves the manufacturer

code. A read cycle at address XX01h returns the device code.

A read cycle containing a sector address (SA) and the address

02h in returns 01h if that sector is protected, or 00h if it is

unprotected. Refer to the Sector Address tables for valid sector

addresses.

The system must write the reset command to exit the

autoselect mode and return to reading array data.

Chip Erase Command Sequence

Chip erase is a six-bus-cycle operation. The chip erase

command sequence is initiated by writing two unlock cycles,

followed by a set-up command. Two additional unlock write

cycles are then followed by the chip erase command, which in

turn invokes the Embedded Erase algorithm. The device does

not require the system to preprogram prior to erase. The

Embedded Erase algorithm automatically preprograms and

verifies the entire memory for an all zero data pattern prior to

electrical erase. The system is not required to provide any

controls or timings during these operations. The Command

Definitions table shows the address and data requirements for

the chip erase command sequence.

Any commands written to the chip during the Embedded

Erase algorithm are ignored.

The system can determine the status of the erase

operation by using DQ7, DQ6, or DQ2. See “Write Operation

Status” for information on these status bits. When the

Embedded Erase algorithm is complete, the device returns to

reading array data and addresses are no longer latched.

Figure 2 illustrates the algorithm for the erase operation.

See the Erase/Program Operations tables in “AC

Characteristics” for parameters, and the Chip /Sector Erase

Operation Timings for timing waveforms.

FIGURE 1: PROGRAM OPERATION

Byte Program Command Sequence

Programming is a four-bus-cycle operation. The program

command sequence is initiated by writing two unlock write

cycles, followed by the program set-up command. The

program address and data are written next, which in turn initiate

the Embedded Program algorithm. The system is not required

to provide further controls or timings. The device

automatically provides internally generated program pulses and

verify the programmed cell margin. The Command Definitions

take shows the address and data requirements for the byte

program command sequence.

When the Embedded Program algorithm is complete, the

device then returns to reading array data and addresses are no

longer latched. The system can determine the status of the

program operation by using DQ7 or DQ6. See “Write Operation

Status” for information on these status bits.

Any commands written to the device during the

Embedded Program Algorithm are ignored.

Programming is allowed in any sequence and across

sector boundaries. A bit cannot be programmed from a “0”

back to a “1”. Attempting to do so may halt the operation and

set DQ5 to “1”, or cause the Data\ Polling algorithm to indicate

the operation was successful. However, a succeeding read will

show that the data is still “0”. Only erase operations can

convert a “0” to a “1”.

NOTE: See the appropriate Command Definitions table for program

command sequence.

AS29F040

Rev. 2.2 09/07

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

7

Share Link: