AS4LC4M16DG-6S/XT(2002) データシートの表示（PDF） - Austin Semiconductor
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AS4LC4M16DG-6S/XT Datasheet PDF : 25 Pages
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Austin Semiconductor, Inc.
DRAM
AS4LC4M16
AC ELECTRICAL CHARACTERISTICS (Continued)5,6,7,8,9,10,11,12
(V = +3.3V ±0.3V)
CC
DESCRIPTION
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS\
RAS\ to column-address delay time
Row address hold time
RAS\ pulse width
RAS\ pulse width (EDO PAGE MODE)
RAS\ pulse width during Self Refresh
Random READ or WRITE cycle time
RAS\ to CAS\ delay time
READ command hold time (referenced to CAS\)
READ command setup time
Refresh period
Refresh period ("S" version)
RAS\ precharge time
RAS\ to CAS\ precharge time
RAS\ precharge time exiting Self Refresh
READ command hold time (referenced to RAS\)
RAS\ hold time
READ-WRITE cycle time
RAS\ to WE\ delay time
WRITE command to RAS\ lead time
Transitioin time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS\)
WE\ command setup time
WE\ to outputs in High-Z
WRITE command pulse width
WE\ pulse widths to disable outputs
WE\ hold time (CBR Refresh)
WE\ setup time (CBR Refresh)
SYMBOL
tPC
tPRWC
tRAC
tRAD
tRAH
tRAS
tRASP
tRASS
tRC
tRCD
tRCH
tRCS
tREF
tREF
tRP
tRPC
tRPS
tRRH
tRSH
tRWC
tRWD
tRWL
tT
tWCH
tWCR
tWCS
tWHZ
tWP
tWPZ
tWRH
tWRP
-5
MIN MAX
20
-6
MIN MAX
25
UNITS NOTES
ns
34
47
56
ns
34
50
60
ns
9
12
ns
15
7
10
ns
50 10,000 60 10,000 ns
50 125,000* 60 125,000* ns
80
80
µs
84
104
ns
11
14
ns 14, 28
0
0
ns 16, 30
0
0
ns
28
64/24**
64/24** ms 22, 23
100
100
ms 23, 38
30
40
ns
5
5
ns
90
105
ns
0
0
ns
16
13
15
ns
35
116
140
ns
67
79
ns
18
13
15
ns
2
25
2
25
ns
8
10
ns
35
38
45
ns
0
0
ns 18, 28
12
15
ns
5
5
ns
10
10
ns
8
10
ns
8
10
ns
NOTES:
*For XT Temp (-55°C to +125°C) tRASP (MAX) = 80,000ns for -5 and -6 speed.
**64ms Refresh for IT Temp, 24ms Refresh for XT Temp.
AS4LC4M16
Rev. 1.0 7/02
10
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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