AS8201 データシートの表示（PDF） - austriamicrosystems AG
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AS8201 Datasheet PDF : 13 Pages
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TTP/C-C1 Communications Controller Data Sheet
AS8201
Austria Mikro Systeme International AG
63-79 ROM_ADDRESS[0:16] O ROM address bus, range = 2^17 = 128k
80 ROM_RESETB
O ROM reset line, active low
81 ROM_CEB
O ROM chip enable, active low
82 ROM_OEB
O ROM output enable, active low
83 ROM_WEB
O ROM write enable, active low; “read”if high.
84 ROM_READY
85 VDD
IPU ROM ready, signals read operation ready, leave open when un-
used
P positive power supply
86 VSS
P negative power supply
87-94 ROM_DATA[0:7]
I/O ROM data bus (lower byte)
95 VDD
P positive power supply
96 VSS
P negative power supply
97- ROM_DATA[8:15]
104
105 VDD
I/O ROM data bus (higher byte)
P positive power supply
106 VSS
P negative power supply
107- RAM_ADDRESS[0:10] I
117
118 RAM_CEB
I
DPRAM address bus, range = 2^11 = 2048
DPRAM chip enable, active low
119 VDD
P positive power supply
120 VSS
P negative power supply
I
Input CMOS
IPU
Input CMOS with pull up
IPD
Input CMOS with pull down
O
Output CMOS
I/O Input/Output CMOS tristate
P
Power Pin
A
Analog Pin
Electrical Specifications
Absolute Maximum Ratings (Non Operating)
SYMBOL PARAMETER
VDD
DC Supply Voltage
Vin
Input Voltage on any Pin
Iin
Input Current on any Pin
Tstrg
Storage Temperature
Tsold
Soldering Temperature
tsold
Soldering Time
H
Humidity
ESD
Electrostatic Discharge
MIN
-0.3 V
- 0.3 V
-100 mA
-55 oC
5%
1000 V
MAX
7.0 V
VDD + 0.3 V
100 mA
150 oC
260 oC
10 sec
85 %
NOTE
25°C
1)
Reflow and Wave
HBM: R = 1.5 kΩ , C = 100 pF
1) 300 oC all ceramic packages and DIL plastic packages, 260 oC for surface mounting plastic packages
Note: Stresses above those listed under “Absolute Maximum Ratings”may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may effect device reliability (e.g. hot carrier degradation).
Rev. NC, October 1999
Page 5 of 13
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