AS7C3513B データシートの表示（PDF） - Alliance Semiconductor

部品番号

コンポーネント説明

メーカー

AS7C3513B

3.3V 32K×16 CMOS SRAM

Alliance Semiconductor 

AS7C3513B

®

Recommended operating conditions

Parameter

Supply voltage

Input voltage

Ambient operating temperature

VIL = -1.0V for pulse width less than 5ns

VIH = VCC + 1.5V for pulse width less than 5ns

commercial

industrial

Symbol

VCC

VIH

VIL

TA

TA

Min

3.0

2.0

–0.5

0

–40

Typical

3.3

–

–

–

–

Max

3.6

VCC + 0.5

0.8

70

85

Unit

V

V

°C

°C

DC operating characteristics (over the operating range)1

-10

-12

-15

-20

Parameter

Sym

Test conditions

Min Max Min Max Min Max Min Max Unit

Input leakage

current

| ILI |

Output leakage

current

| ILO |

Operating

power supply ICC

current

VCC = Max

VIN = GND to VCC

VCC = Max

VOUT = GND to VCC

VCC = Max, CE ≤ VIL

f = fMax , IOUT = 0mA

– 1 – 1 – 1 – 1 µA

– 1 – 1 – 1 – 1 µA

– 80 – 75 – 70 – 65 mA

ISB

Standby power

supply current

ISB1

VCC = Max, CE ≥ VIH

f = fMax

VCC = Max, CE ≥ VCC–0.2V

VIN ≤ 0.2V or VIN ≥ VCC –0.2V,

f=0

– 30 – 25 – 20 – 20 mA

– 5 – 5 – 5 – 5 mA

Output voltage VOL

VOH

IOL = 8 mA, VCC = Min

IOH = –4 mA, VCC = Min

– 0.4 – 0.4 – 0.4 – 0.4 V

2.4 – 2.4 – 2.4 – 2.4 – V

Capacitance (f = 1MHz, Ta = 25o C, VCC = NOMINAL)2

Parameter

Symbol

Signals

Input capacitance

I/O capacitance

CIN

CI/O

A, CE, WE, OE, LB, UB

I/O

Test conditions

Vin = 0V

Vin = Vout = 0V

Max Unit

5 pF

7 pF

3/24/04, v.1.2

Alliance Semiconductor

P. 3 of 10

Share Link: