AT-41485(1999) データシートの表示（PDF） - HP => Agilent Technologies

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AT-41485
(Rev.:1999)

Up to 6 GHz Low Noise Silicon Bipolar Transistor

HP => Agilent Technologies 

Up to 6 GHz Low Noise

Silicon Bipolar Transistor

Technical Data

AT-41485

Features

• Low Noise Figure:

1.4 dB Typical at 1.0 GHz

1.7 dB Typical at 2.0 GHz

• High Associated Gain:

18.5 dB Typical at 1.0 GHz

13.5 dB Typical at 2.0 GHz

• High Gain-Bandwidth

Product: 8.0 GHz Typical fT

Description

Agilent’s AT-41485 is a general

purpose NPN bipolar transistor

that offers excellent high fre-

quency performance. The AT-

41485 is housed in a low cost

.085" diameter plastic package.

The 4 micron emitter-to-emitter

pitch enables this transistor to be

used in many different functions.

The 14 emitter finger interdigi-

tated geometry yields an interme-

diate sized transistor with imped-

ances that are easy to match for

low noise and moderate power

applications. Applications include

use in wireless systems as an LNA,

gain stage, buffer, oscillator, and

mixer. An optimum noise match

near 50 Ω at 900 MHz, makes this

device easy to use as a low noise

amplifier.

85 Plastic Package

The AT-41485 bipolar transistor is

fabricated using Agilent’s 10 GHz

fT Self-Aligned-Transistor (SAT)

process. The die is nitride passi-

vated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

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