AT24C08B-TH-B データシートの表示（PDF） - Atmel Corporation
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AT24C08B-TH-B Datasheet PDF : 26 Pages
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2. Memory Organization
AT24C04B, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each, the 4K
requires an 9-bit data word address for random word addressing.
AT24C08B, 8K SERIAL EEPROM: Internally organized with 64 pages of 16 bytes each, the 8K
requires a 10-bit data word address for random word addressing.
Table 2-1. Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V
Symbol Test Condition
Max
CI/O
Input/Output Capacitance (SDA)
8
CIN
Input Capacitance (A0, A1, A2, SCL)
6
Note: 1. This parameter is characterized and is not 100% tested.
Units
pF
pF
Conditions
VI/O = 0V
VIN = 0V
Table 2-2. DC Characteristics
Applicable over recommended operating range from: TAI = –40°C to +85°C, VCC = +1.8V to +5.5V, (unless otherwise noted)
Symbol Parameter
Test Condition
Min
Typ
Max
Units
VCC1
VCC2
VCC3
VCC4
ICC
ICC
ISB1
ISB2
ISB3
ISB4
ILI
ILO
VIL
VIH
VOL2
VOL1
Note:
Supply Voltage
Supply Voltage
Supply Voltage
Supply Voltage
Supply Current VCC = 5.0V
Supply Current VCC = 5.0V
Standby Current VCC = 1.8V
Standby Current VCC = 2.5V
Standby Current VCC = 2.7V
Standby Current VCC = 5.0V
Input Leakage Current
Output Leakage Current
Input Low Level(1)
Input High Level(1)
READ at 100 kHz
WRITE at 100 kHz
VIN = VCC or VSS
VIN = VCC or VSS
VIN = VCC or VSS
VIN = VCC or VSS
VIN = VCC or VSS
VOUT = VCC or VSS
Output Low Level VCC = 3.0V
IOL = 2.1 mA
Output Low Level VCC = 1.8V
IOL = 0.15 mA
1. VIL min and VIH max are reference only and are not tested.
1.8
5.5
V
2.5
5.5
V
2.7
5.5
V
4.5
5.5
V
0.4
1.0
mA
2.0
3.0
mA
0.6
3.0
µA
1.4
4.0
µA
1.6
4.0
µA
8.0
18.0
µA
0.10
3.0
µA
0.05
3.0
µA
–0.6
VCC x 0.7
VCC x 0.3
V
VCC + 0.5
V
0.4
V
0.2
V
4 AT24C04B/08B
5226D–SEEPR–7/08
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