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NX25F641C データシートの表示(PDF) - NexFlash -> Winbond Electronics

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NX25F641C
NexFlash
NexFlash -> Winbond Electronics NexFlash
NX25F641C Datasheet PDF : 23 Pages
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NX25F641C
After the CS pin is brought high, the data in the SRAM is
transferred to the specified sector in memory array. See
tWP timing specifications. During this time the array and
SRAM will be “busy” and will ignore further array-related
commands until complete. All Ready/Busy status indica-
tors will indicate a busy status.
Write to SRAM Command (72H and 74H)
The Write to SRAM command (72H and 74H) provides
access to the 528-byte SRAM independently of any Flash
memory array operation. When CS is asserted high to
complete the command, the contents of the SRAM will be
maintained until overwritten through another command or
the power is removed. Using the Write to SRAM command,
data can be loaded in preparation of writing to a sector in
memory and then transferred to a selected sector using
the Transfer SRAM to Sector command. The TR bit in the
status register should be checked first if Transfer Sector to
SRAM or Compare Sector to SRAM commands are used.
TRANSFER AND REFRESH COMMANDS
Transfer SRAM to Sector (F3H and 94H)
The Transfer SRAM to Sector command (F6H and 98H)
will write the existing contents of the SRAM to the speci-
fied sector in memory. The command sequence is iden-
tical to that of the Write to Sector Using SRAM
command except that immediately after the sector
address field S[15:0] and 16 control clocks, the CS pin
is asser ted high. This automatically transfers the
528-bytes of SRAM data to the specified sector in the
memory array. During this time, the array and the SRAM
will be busy.
Compare Sector to SRAM (8DH and 8EH)
The Compare Sector to SRAM command (8DH/8EH) does
a bit-by-bit comparison of the data stored in the addressed
sector against data in the SRAM. The TR status bit will be
1 during the transfer compare operation. If any of the
compared bits are not equal, then the Compare Not Equal
(CNE) bit in the Status Register is set to a 1.
Refresh Sector Using SRAM (58H and 59H)
The Refresh Sector Using SRAM command (58H and
59H) will automatically transfer the contents of the
specified sector into the SRAM and then re-write the
data to the same sector. The purpose of this command
is to enhance data integrity and cycle endurance. Con-
tact NexFlash Marketing for updated information regard-
ing usage of the Refresh Command. During this com-
mand the array and the SRAM will be busy.
CONFIGURATION AND STATUS
COMMANDS
Read Device Information Sector (15H)
The Read Device Information command provides access
to a read-only sector that can be used to electronically
identify the NexFlash Serial Flash device being interfaced
to. Information available includes: part number, density,
voltage, temperature range, package type, and any
special options. Contact NexFlash for more detailed infor-
mation on the Device Information Sector format.
Read Configuration Register (8CH)
The Read Configuration Register command provides
access to the configuration register, which stores the
current configuration of the HOLD-R/B pin, read clock
edge, write protect range (see figure 5). A 16-bit Configu-
ration Data field CF[15:0] provides the contents of the
Configuration Register. Although the field is 16-bits long,
only bits CF[7:0] are used. All other upper bits are reserved
for future features.
Write Configuration Register (8AH)
The Write Configuration Register command provides
access to the configuration register which stores the cur-
rent configuration of the HOLD-R/B pin, read-data clock
edge and write protect range. The configuration register
is non-volatile. Once set using the Write Configuration
Register command, the contents will maintain even when
power is removed. Because the register’s state is stored
in non-volatile memory, there is a finite endurance limit to
the number of times it can be written to. To limit the
number of writes, it is recommended that before writing to
NexFlash Technologies, Inc.
17
PRELIMINARY NXSF032A-0502
05/06/02 ©

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