AT28HC64B-55 データシートの表示（PDF） - Atmel Corporation

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AT28HC64B-55

64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection

Atmel Corporation 

AT28HC64B

Features

Fast Read Access Time - 55 ns

•• Automatic Page Write Operation

Internal Address and Data Latches for 64-Bytes

• Fast Write Cycle Times

Page Write Cycle Time: 10 ms Maximum

1 to 64-Byte Page Write Operation

• Low Power Dissipation

40 mA Active Current

100 µA CMOS Standby Current

Hardware and Software Data Protection

• DATA Polling and Toggle Bit for End of Write Detection

•• High Reliability CMOS Technology

Endurance: 100,000 Cycles

Data Retention: 10 Years

• Single 5V ± 10% Supply

CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-Wide Pinout

•• Commercial and Industrial Temperature Ranges

Description

The AT28HC64B is a high-performance electrically erasable and programmable read

only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 55 ns with power dissipation of just 220 mW. When the device is

deselected, the CMOS standby current is less than 100 µA.

The AT28HC64B is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

Pin Configurations

(continued)

Pin Name

A0 - A12

CE

OE

WE

I/O0 - I/O7

NC

DC

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

Don’t Connect

TSOP

Top View

PDIP, SOIC

Top View

PLCC

Top View

64K (8K x 8)

High Speed

CMOS

E2PROM with

Page Write and

Software Data

Protection

AT28HC64B

Note: PLCC package pins 1 and

17 are DON’T CONNECT.

0274D

2-267

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