AT49F010(1998) データシートの表示（PDF） - Atmel Corporation
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AT49F010 Datasheet PDF : 12 Pages
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Features
• Single Voltage Operation
– 5V Read
– 5V Reprogramming
• Fast Read Access Time - 45 ns
• Internal Program Control and Timer
• 8K Bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte-By-Byte Programming - 10 µs/Byte
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 30 mA Active Current
– 100 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49F010/HF010 are 5-volt only in-system programmable and erasable Flash
Memories. Their 1 megabit of memory is organized as 131,072 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer
access times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby
current is less than 100 µA.
(continued)
Pin Configurations
Pin Name
A0 - A16
Function
Addresses
CE
Chip Enable
OE
WE
I/O0 - I/O7
Output Enable
Write Enable
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
DIP Top View
NC 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
GND 16
32 VCC
31 WE
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A11 1
A9 2
A8 3
A13 4
A14 5
NC 6
WE 7
VCC 8
NC 9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
PLCC Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
1-Megabit
(128K x 8)
5-volt Only
Flash Memory
AT49F010
AT49HF010
Rev. 0852B–10/98
1
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