ATA06211 データシートの表示（PDF） - ANADIGICS
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ATA06211 Datasheet PDF : 8 Pages
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ATA06211
APPLICATION INFORMATION
VDD
56pF
GND
56pF
ATA06211D1C Bonding Pads
VDD2
VDD1
925 um 7I
PIN
IIN
GND
GND
1992
GND
VOUT
GND GND GND CBY CBY GND CAGC GND
OUT
1250 um
56pF
56pF
Figure 3: Typical Bonding Diagram
Power Supplies and General Layout Considerations
The ATA06211D1C may be operated from a positive
supply as low as + 4.5 V and as high as + 6.0 V.
Below + 4.5 V, bandwidth, overload and sensitivity
will degrade, while at + 6.0 V, bandwidth, overload
and sensitivity improve (see Bandwidth vs.
Temperature curves). Use of surface mount
(preferably MIM type capacitors), low inductance
power supply bypass capacitors (>=56pF) are
essential for good high frequency and low noise
performance. The power supply bypass capacitors
should be mounted on or connected to a good low
inductance ground plane.
General Layout Considerations
Since the gain stages of the transimpedance
amplifier have an open loop bandwidth in excess of
1.0 GHz, it is essential to maintain good high
frequency layout practices. To prevent oscillations, a
low inductance RF ground plane should be made
the utmost care should available for power supply
bypassing. Traces that can be made short should
be made short, and be taken to maintain very low
capacitance at the photodiode-TIA interface (IIN), as
excess capacitance at this node will cause a
degradation in bandwidth and sensitivity (see
Bandwidth vs. CT curves).
0.90
0.80
C T = 0.5 pF
VDD = 5.5 V
0.70 VDD = 5.0 V
0.60
0.50
VDD = 4.5 V
0.40
-40
10
60 85
Temperature (O C)
Figure 4: Bandwidth vs. Temperature
Note: All performance curves are typical @ TA =25 C°
unless otherwise noted.
4
PRELIMINARY DATA SHEET - Rev 4
08/2001
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