ATA12001 データシートの表示（PDF） - ANADIGICS
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ATA12001 Datasheet PDF : 8 Pages
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BANDWIDTH vs. CT
1800
1600
1400
1200
B(3dB) ≈A / 2 π RF (CN + CT)
VDD = 5.5 V
VDD = 5.0 V
1000
800
VDD = 4.5 V
600
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
CT(pF)
Figure 5: Bandwidth vs. CT
Note: All performance curves are typical @ TA =25°C
unless otherwise noted.
VDD=5.5 V
VDD=4.5 V
RF
I IIN
ATA12001
1.7
1.6
1.5
1.4
1.3
1.2
5 1.1
1.0
- 2.2 - 1.7 - 1.2 - 0.7 - 0.2
IIN (mA DC)
Figure 7: Bandwidth vs. IIN
IIN Connection
(refer to the equivalent circuit diagram) Bonding the
detector cathode to IIN (and thus drawing current from
the ATA12001) improves the dynamic range. Although
the detector may be used in the reverse direction for
input currents not exceeding 25 mA, the specifications
for optical overload will not be met.
2.0
1.8
1.6
12001
IIN
I
1.4
50
1.2
1.0
VDD = 5.5 V
0.8
0.6
VDD = 4.5 V 0.4
-2.2 -1.7 -1.2 -0.7 -0.2
IIN (mA DC)
Figure 6: Transimpedance vs. IIN
VOUT Connection
The output pad should be connected via a coupling
capacitor to the next stage of the receiver channel
(filter or decision circuits), as the output buffers are
not designed to drive a DC coupled 50 ohm load
(this would require an output bias current of
approximately 36 mA to maintain a quiescent 1.8
Volts across the output load). If VOUT is connected to a
high input impedance decision circuit (>500 ohms),
then a coupling capacitor may not be required,
although caution should be exercised since DC
offsets of the photo detector/TIA combination may
cause clipping of subsequent gain or decision
circuits.
Output Collapse
3.4
heavy AGC 3.2
3.0
2.9
2.7
2.5
VDD =5.5 V
Linear Region
2.4
2.2
2.0
1.9
1.7
Rf
1.5
1.4
IIN
1.2
V 12001
OUT 1.0
0.8
0.7
0.5
0.3
VDD=4.5 V
0.2
0.0
-4
-3
-2
-1
IIN(mA DC)
Figure 8: VOUT vs. IIN
PRELIMINARY DATA SHEET - Rev 4
5
08/2001
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