ATF-35143-TR2 データシートの表示（PDF） - HP => Agilent Technologies
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ATF-35143-TR2
HP => Agilent Technologies
ATF-35143-TR2 Datasheet PDF : 19 Pages
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ATF-35143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Idss [1]
VP [1]
Saturated Drain Current
Pinchoff Voltage
VDS = 1.5 V, VGS = 0 V
VDS = 1.5 V, IDS = 10% of Idss
Id
gm[1]
Quiescent Bias Current
Transconductance
VGS = 0.45 V, VDS = 2 V
VDS = 1.5 V, gm = Idss /VP
IGDO Gate to Drain Leakage Current
VGD = 5 V
Igss
Gate Leakage Current
VGD = VGS = -4 V
NF
Noise Figure[3]
f = 2 GHz
f = 900 MHz
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
f = 2 GHz VDS = 2 V, IDS = 15 mA
Ga
Associated Gain[3]
VDS = 2 V, IDS = 5 mA
f = 900 MHz VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
OIP3
P1dB
Output 3rd Order
Intercept Point[4, 5]
1 dB Compressed
Intercept Point[4]
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA
VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2 V 5 mA min/max data guaranteed via the 2 V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. Pout = -10 dBm per tone
Units
mA
V
mA
mmho
µA
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
40
-0.65
—
90
—
16.5
14
19
Typ.[2]
65
- 0.5
15
120
10
0.4
0.5
0.3
0.4
18
16
20
18
21
14
19
14
10
8
9
9
Max.
80
- 0.35
—
—
250
150
0.7
0.9
19.5
18
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = 5°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
3
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