ATF-36077 データシートの表示（PDF） - HP => Agilent Technologies
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ATF-36077 Datasheet PDF : 4 Pages
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ATF-36077 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
ID
PT
Pin max
Tch
TSTG
Parameter
Drain – Source Voltage
Gate – Source Voltage
Gate-Drain Voltage
Drain Current
Total Power Dissipation[3]
RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
dBm
°C
°C
Absolute
Maximum[1]
+3
-3
-3.5
Idss
180
+10
150
-65 to 150
Thermal Resistance[2,3]:
θch-c = 60°C/W
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Measured at Pdiss = 15 mW and
Tch = 100°C.
3. Derate at 16.7 mW/°C for TC > 139°C.
ATF-36077 Electrical Specifications,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
Units
NF
Noise Figure[1]
f = 12.0 GHz dB
GA
Gain at NF[1]
f = 12.0 GHz dB
gm
Transconductance
VDS = 1.5 V, VGS = 0 V
mS
Idss
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V mA
Vp 10 %
Pinch-off Voltage
VDS = 1.5 V, IDS = 10% of Idss
V
Note:
1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
Min.
11.0
50
15
-1.0
Typ.
0.5
12.0
55
25
-0.35
Max.
0.6
45
-0.15
ATF-36077 Characterization Information,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
NF
GA
S12 off
P1dB
VGS 10 mA
Noise Figure (Tuned Circuit)
Gain at Noise Figure (Tuned Circuit)
Reverse Isolation
Output Power at 1 dB Gain Compression
Gate to Source Voltage for IDS = 10 mA
f = 4 GHz
f = 12 GHz
f = 4 GHz
f = 12 GHz
f = 12 GHz, VDS = 1.5 V, VGS = -2 V
f = 4 GHz
f = 12 GHz
VDS = 1.5 V
Note:
2. See noise parameter table.
Units
dB
dB
dB
dB
dB
dBm
dBm
V
Typ.
0.3[2]
0.5
17
12
14
5
5
-0.2
5-76
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