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ATF-54143 データシートの表示(PDF) - HP => Agilent Technologies

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ATF-54143 Datasheet PDF : 16 Pages
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ATF-54143 Absolute Maximum Ratings[1]
Symbol
VDS
V
GS
VGD
IDS
P
diss
Pin max.
I
GS
T
CH
TSTG
θjc
Parameter
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage [2]
Drain Current [2]
Total Power Dissipation [3]
RF Input Power
Gate Source Current
Channel Temperature
Storage Temperature
Thermal Resistance [4]
120
0.7 V
100
0.6 V
80
60
0.5 V
40
20
0
0 12 3 45
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
0.4 V
0.3 V
67
Units
V
V
V
mA
mW
dBm
mA
°C
°C
°C/W
Absolute
Maximum
5
-5 to 1
5
120
360
10[5]
2[5]
150
-65 to 150
162
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 92°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. The device can handle +10 dBm RF Input
Power provided IGS is limited to 2 mA. IGS at
P1dB drive level is bias circuit dependent. See
application section for additional information.
Product Consistency Distribution Charts [6, 7]
160
120
-3 Std
80
40
Cpk = 0.77
Stdev = 1.41
200
160
120
-3 Std
80
40
160
Cpk = 1.35
Stdev = 0.4
120
+3 Std
80
40
Cpk = 1.67
Stdev = 0.073
+3 Std
0
30 32
34 36 38
OIP3 (dBm)
40 42
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
0
14
15
16
17
18
19
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
0
0.25
0.45
0.65
0.85
1.05
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circut losses have been de-embeaded from actual measurements.
2

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