ATF-54143 データシートの表示（PDF） - HP => Agilent Technologies

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ATF-54143

Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package

HP => Agilent Technologies 

ATF-54143 Typical Performance Curves, continued

2

25°C

-40°C

85°C

1.5

1.0

0.5

0

0

1

2

3

4

5

6

FREQUENCY (GHz)

Figure 15. Fmin[2] vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

45

40

35

30

25

20

25°C

15

-40°C

85°C

10

0

1

2

3

4

5

6

FREQUENCY (GHz)

Figure 16. OIP3 vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

1.4

1.2

1.0

0.8

0.6

0.4

60 mA

40 mA

0.2

80 mA

0

01 2 3 4 5 67

FREQUENCY (GHz)

Figure 18. Fmin[1] vs. Frequency and Ids

at 3V.

21

20.5

20

19.5

19

18.5

18

25°C

17.5

-40°C

85°C

17

0

1

2

3

4

5

6

FREQUENCY (GHz)

Figure 17. P1dB vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3,

VDS = 3V, IDS = 60 mA

Freq

(GHz)

Γ Out_Mag.[1]

(Mag)

Γ Out_Ang.[1]

(Degrees)

OIP3

(dBm)

P1dB

(dBm)

0.9

0.017

115

2.0

0.026

-85

3.9

0.013

173

5.8

0.025

102

35.54

36.23

37.54

35.75

18.4

20.38

20.28

18.09

Note:

1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.

Note:

1. Fmin values at 2 GHz and higher are based on

measurements while the Fmins below 2 GHz

have been extrapolated. The Fmin values are

based on a set of 16 noise figure measure-

ments made at 16 different impedances using

an ATN NP5 test system. From these

measurements a true Fmin is calculated.

Refer to the noise parameter application

section for more information.

5

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